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Application of UVLED in local opening treatment of PERC cell back passivation layer

  As photovoltaic technology continues to evolve, PERC cells, with their high photoelectric conversion efficiency, have gradually become mainstream in the market. A key advantage of PERC cells lies in their back-side passivation layer, a special structure that effectively reflects light, increasing the amount of light captured and thus improving the cell's power generation efficiency. However, to achieve electrical interconnection between the electrodes, localized openings in the back-side passivation layer are required. Traditional methods often suffer from issues such as insufficient precision, low efficiency, and potential damage to the cell.

  The passivation layer on the back of the PERC cell is primarily composed of materials such as aluminum oxide (Al₂O₃) and silicon nitride (SiN). These materials have excellent light reflectivity and passivation properties, helping to improve the cell's short-circuit current and open-circuit voltage. However, to achieve electrical interconnection between the cells, tiny windows need to be precisely opened in the passivation layer so that the electrodes can penetrate the passivation layer and contact the silicon substrate. While traditional methods such as laser etching and chemical etching can achieve this goal, they have some limitations that are difficult to overcome in practical applications.

  High-energy ultraviolet light with a wavelength of 365-405nm is well-matched to the photosensitive material on the backside passivation layer of PERC cells, enabling localized removal of the passivation layer through a photochemical reaction. In practice, precise control of the UVLED area light source's intensity, duration, and spot size enables micron-level aperture accuracy, ensuring that the size and position of the electrode window meet design requirements.

  UVLED surface light sources generate extremely low heat during operation. Compared to traditional thermal curing methods, the curing process causes virtually no thermal stress to the cells. This means that during the localized opening of the back passivation layer, the silicon substrate and other functional layers of the PERC cell are protected from thermal damage, thereby maintaining the cell's photoelectric conversion efficiency and long-term stability. This is of great significance for improving the overall performance and service life of photovoltaic modules.

  UVLED surface light sources offer rapid curing, enabling the completion of localized openings in the passivation layer in a short period of time. Compared to traditional laser and chemical etching processes, UVLED surface light sources offer faster curing speeds, significantly shortening production cycles and increasing production line cycle time and productivity. This enables photovoltaic companies to produce more cells within the same production timeframe, helping to meet the growing market demand for high-efficiency photovoltaic products.

  With the continuous advancement of photovoltaic technology, PERC cells are also evolving, and new generation high-efficiency photovoltaic cell technologies such as TOPCon cells are gradually emerging. These new technologies have put forward higher requirements on the local opening of the back passivation layer in terms of cell structure and process. UVLED surface light sources are expected to continue to play an important role in these emerging fields with their excellent technical performance and flexible customization capabilities.